* Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A
* Low drive current
* High speed switching
* High density mounting
* Suitable for H-bridge.

Silicon N-Channel Power MOS FET Array

4AK20

4AK21

4AK22

4AK25

4AK26

4AK27

4AK15

4AK16

4AK17

4AK18

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