* Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A
* Low drive current
* High speed switching
* High density mounting
* Suitable for H-bridge.

Silicon N-Channel Power MOS FET Array

4AK20

4AK21

4AK22

4AK25

4AK26

4AK27

4AK15

4AK16

4AK17

4AK18

4AK19

4A1

4A10

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts